Germanium selenium Antimony Tellurium Indium, Sputtering Target, 99.99%, 3 inch dia x 0.125 inch th.

This multi-component chalcogenide alloy is utilized as a sputtering target material for the deposition of thin films in phase-change memory (PCM) and advanced optical data storage applications.

GeSeSbTeIn is employed as a complex chalcogenide semiconductor material, specifically for its tunable phase-change properties in non-volatile memory devices.

Used in the fabrication of optoelectronic devices that leverage the material's rapid transition between amorphous and crystalline states to modulate optical properties.