Germanium Antimony Selenium Telluride, Sputtering Target, 99.99%, 3 inch dia x 0.125 inch th.

Germanium Antimony Selenium Telluride is utilized as a sputtering target material for the deposition of quaternary chalcogenide thin films used in phase-change memory (PCM) and advanced electronic switching devices.

This material serves as a complex chalcogenide glass semiconductor, specifically engineered for its tunable electrical properties and rapid phase transitions in non-volatile memory applications.

GeSbSeTe is employed in optoelectronic devices due to its high refractive index and the significant change in optical constants between its amorphous and crystalline states.