Hafnium Silicon Alloy, Sputtering Target, 99.9%, 14 inch dia x 0.250 inch th.

Hafnium silicide targets are used in physical vapor deposition to create thin films for high-k dielectric layers and gate electrodes in advanced semiconductor devices.

Used in the fabrication of metal-oxide-semiconductor (MOS) structures as a precursor for hafnium silicate interfaces to improve thermal stability and electrical performance.