Hafnium Silicide, Sputtering Target, 99.8%, 3 inch dia x 0.25 inch th.

Hafnium silicide is used as a sputtering target material for the deposition of thin films in microelectronic applications, particularly for gate electrodes and diffusion barriers.

Used in the fabrication of metal-oxide-semiconductor (MOS) devices as a contact material or silicide layer to improve electrical performance and thermal stability.

Due to its high melting point and chemical stability, hafnium silicide is utilized in high-temperature refractory coatings and structural components.