Hafnium Zirconium Oxide, Sputtering Target, 99.9%, 4 inch dia x 0.25 inch th.

Hafnium Zirconium Oxide (HZO) is utilized as a high-k dielectric material in advanced CMOS logic and memory devices, particularly for its ferroelectric properties in non-volatile RAM.

HZO targets are used in magnetron sputtering processes to deposit thin films for microelectronic applications requiring precise control over the Hf:Zr ratio.

Used to create high-refractive index thin films with high laser-induced damage thresholds for multilayer optical interference coatings.