Hafnium-Indium-Zinc Oxide, Sputtering Target, 99.99%, 80 mm dia x 5 mm th.

Hafnium-Indium-Zinc Oxide (HIZO) is utilized as a high-mobility channel material for thin-film transistors (TFTs) in next-generation semiconductor devices, offering improved bias stability compared to standard IGZO.

HIZO ceramic targets are used in magnetron sputtering processes to deposit high-quality transparent semiconducting thin films for display backplanes and electronic sensors.

Used in the fabrication of transparent conductive oxides and active layers for optoelectronic devices, including high-resolution flat panel displays and transparent electronics.