Hafnium Zirconium Lanthanum Oxide, Sputtering Target, 99.9%, 1 inch dia x 0.25 inch th.

Hafnium Zirconium Lanthanum Oxide is used as a high-purity sputtering target material to deposit high-k dielectric thin films for advanced gate stacks and memory devices.

This complex oxide is utilized in semiconductor fabrication as a high-permittivity gate insulator to reduce leakage current in scaled-down transistor architectures.

Applied via physical vapor deposition to create thin films with specific refractive indices and high thermal stability for precision optical components.