Indium Gallium Zinc Tin Oxide, Sputtering Target, 99.99%, 2 inch dia x 4 mm th.

Used as a high-purity ceramic sputtering target to deposit thin-film transistors (TFTs) with high electron mobility and stability for next-generation flat panel displays.

Acts as a wide-bandgap oxide semiconductor material for the active layer in transparent electronics and high-resolution liquid crystal displays.

Utilized in the fabrication of transparent conducting films that require high optical transparency and controlled electrical conductivity for optoelectronic devices.