Indium Selenide

Indium selenide is a III-VI layered semiconductor used in the fabrication of high-performance photodetectors and field-effect transistors due to its high electron mobility and tunable bandgap.

Utilized in optoelectronic devices such as solar cells and infrared sensors because of its strong light-matter interaction and efficient photoresponse.

Used as a sputtering target material for the deposition of thin films in the production of CIGS (Copper Indium Gallium Selenide) solar cells and phase-change memory devices.

Synthesized into 2D nanosheets and nanowires for research into next-generation electronics and quantum confinement effects.