Chemical Name
Indium Arsenide
Chemical Formula
InAs
Purity
99.999%
Composition
Size
3 inch dia x 0.125 inch th.
EINECS Number
215-115-3
Quantity Available
pcs
CAS Number
1303-11-3
Status
Product ID
SPINAS3D3T05N
Hazmat
Class 6.1, UN1557, PG III
Catalog Number
4209
Description
Comments
Polycrystalline
Indium Arsenide is a direct bandgap III-V semiconductor used in high-speed electronics and infrared detectors due to its high electron mobility and narrow bandgap.
Used in the fabrication of infrared LEDs, laser diodes, and photodetectors operating in the 1–3.8 µm wavelength range.
InAs sputtering targets are utilized to deposit thin films for the development of magnetic sensors and advanced heterostructure devices.
Used as a source material in physical vapor deposition processes to create epitaxial layers for high-frequency semiconductor components.
Loading COA files…
