Chemical Name
Indium Gallium Nitride
Chemical Formula
InGaN
Purity
99.99%
Composition
12.5/37.5/50.0 wt% In:Ga:N
Size
3 inch dia x 0.25 inch th.
EINECS Number
Quantity Available
pcs
CAS Number
Status
1 pc
Product ID
SPINGAN3D6T4N
Hazmat
Catalog Number
10641
Description
Comments
Indium Gallium Nitride is a critical semiconductor material used as the light-emitting layer in high-brightness blue, green, and white LEDs and laser diodes.
Used as a ternary III/V direct bandgap semiconductor where the bandgap can be tuned by adjusting the indium-to-gallium ratio for various electronic applications.
InGaN targets are utilized in sputtering processes to deposit thin-film semiconductor layers for the fabrication of advanced optoelectronic devices.
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