Chemical Name
Indium Oxide-Gallium Oxide
Chemical Formula
In2O3-Ga2O3
Purity
99.99%
Composition
Size
3 inch dia x 0.25 inch th.
EINECS Number
Quantity Available
pcs
CAS Number
Status
Product ID
SPINGAO3D6T4N
Hazmat
Not hazardous for transportation
Catalog Number
2782
Description
Comments
60/40 wt% (In2O3/Ga2O3)
Indium Oxide-Gallium Oxide (IGO) is used as a sputtering target material to deposit thin-film transistors (TFTs) and transparent conductive oxides in display technologies.
Used as a wide-bandgap oxide semiconductor material for high-performance thin-film transistors and optoelectronic devices.
Applied in the fabrication of transparent electrodes and active layers for flat panel displays and solar cells due to its high transparency and tunable electrical properties.
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