Chemical Name
Indium Antimony Tellurium
Chemical Formula
In/Sb/Te
Purity
99.99%
Composition
3/1/2 at% In:Sb:Te
Size
2 inch dia x 0.125 inch th.
EINECS Number
Quantity Available
pcs
CAS Number
Status
Product ID
SPINSBTE2D3T4N
Hazmat
Catalog Number
14505
Description
Comments
Indium Antimony Tellurium (IST) targets are used in magnetron sputtering processes to deposit phase-change thin films for advanced non-volatile memory applications.
IST is utilized as a phase-change material in semiconductor devices, specifically for Phase-Change Random Access Memory (PRAM) due to its rapid reversible transition between amorphous and crystalline states.
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