Chemical Name
Indium Antimony Tellurium
Chemical Formula
In/Sb/Te
Purity
99.99%
Composition
3.8/75/17.7 at% (In:Sb:Te)
Size
50 mm x 50 mm x 4 mm th.
EINECS Number
Quantity Available
pcs
CAS Number
Status
Product ID
SPINSBTE505044N
Hazmat
Catalog Number
8934
Description
Comments
Indium Antimony Tellurium (IST) targets are used in magnetron sputtering processes to deposit phase-change thin films for advanced non-volatile memory applications.
IST is utilized as a phase-change material in semiconductor devices, specifically for Phase-Change Random Access Memory (PRAM) due to its rapid reversible transition between amorphous and crystalline states.
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