Iridium Silicon (x/y at%), Sputtering Target, 99.95%, 2 inch dia x 0.125 inch th.

Iridium silicide targets are used in sputtering processes to create thin films for Schottky barrier infrared detectors and ohmic contacts in microelectronic devices.

Used as a silicide material for forming high-quality Schottky barriers and stable electrical interfaces in silicon-based semiconductor technology.