Lithium Gallium Oxide, Sputtering Target, 99.9%, 4 inch dia x 0.125 mm th.

Used as a lattice-matched substrate for the epitaxial growth of wide-bandgap semiconductors like Gallium Nitride (GaN) due to its similar crystal structure and lattice constants.

Fabricated into sputtering targets for the deposition of thin films used in optoelectronic devices and as buffer layers in semiconductor heterostructures.

Serves as a substrate material for ultraviolet and blue light-emitting diodes (LEDs) and laser diodes.