Magnesium Silicide, Sputtering Target, 99.9%, 3 inch dia x 0.25 inch th.

Magnesium silicide is an n-type narrow-gap semiconductor used in the development of thermoelectric generators and infrared detectors.

Used as an alloying element in aluminum (6000 series) to form hardening precipitates that significantly increase mechanical strength and corrosion resistance.

Utilized as a sputtering target material for the deposition of thin films in microelectronic and optoelectronic device fabrication.