Lead Selenide, Sputtering Target, 99.99%, 3 inch dia x 0.125 inch th.

Lead selenide is a narrow-bandgap semiconductor used in the fabrication of infrared detectors, sensors, and emitters operating in the mid-wavelength infrared (MWIR) spectrum.

Utilized as an IV-VI compound semiconductor material for thermoelectric devices and mid-infrared optoelectronic applications.

PbSe targets are used in physical vapor deposition processes to create thin films for infrared-sensitive layers in imaging and sensing devices.

Used as a source material for thermal or e-beam evaporation to deposit high-purity chalcogenide thin films for optical and electronic applications.

Synthesized as quantum dots (nanocrystals) to exploit size-tunable bandgaps for advanced solar cells and infrared light-emitting diodes.