Antimony Selenide, Sputtering Target, 99.999%, 1 inch dia x 0.250 inch th.

Antimony selenide is a p-type chalcogenide semiconductor with a direct bandgap of approximately 1.1-1.2 eV, making it highly suitable for thin-film solar cell absorbers and photodetectors.

High-purity Sb2Se3 targets are utilized in magnetron sputtering processes to deposit uniform thin films for the fabrication of photovoltaic devices and phase-change memory components.

Due to its high vapor pressure and congruent evaporation, Sb2Se3 is used as a source material in thermal evaporation and close-spaced sublimation (CSS) for high-efficiency solar cell production.

Synthesized as nanowires, nanoribbons, or quantum dots, Sb2Se3 nanomaterials are researched for enhanced optoelectronic properties and as anode materials in alkali-metal ion batteries.