Silicon Germanium Alloy, Sputtering Target, 99.999%, 3 inch dia x 0.188 inch th.

Silicon Germanium is used in heterojunction bipolar transistors (HBTs) and high-speed integrated circuits to improve carrier mobility and device performance compared to pure silicon.

SiGe sputtering targets are utilized to deposit thin films for the fabrication of microelectronic components and thermoelectric devices.

Used in the production of photodetectors and integrated photonic devices where the tunable bandgap of the SiGe alloy allows for infrared light detection.