Silicon Phosphorus, Sputtering Target, 99.9%, 3 inch dia x 0.125 inch th.

Silicon phosphide is utilized as a dopant source and in the synthesis of phosphorus-doped silicon layers for advanced semiconductor device fabrication.

Silicon phosphide targets are used in sputtering processes to deposit thin films for microelectronic and optoelectronic applications requiring specific phosphorus concentrations.

Silicon-phosphorus compounds are researched as high-capacity anode materials for lithium-ion batteries due to their ability to mitigate volume expansion during lithiation.