Tin Oxide-Gallium, Sputtering Target, 99.99%, 2 inch dia x 0.125 inch th.

Tin Oxide-Gallium is utilized as a target material in magnetron sputtering to deposit transparent conductive oxide (TCO) thin films with tunable electrical and optical properties.

This material serves as a wide-bandgap semiconductor component, where gallium doping modifies the carrier concentration and conductivity of the tin oxide matrix for electronic devices.

Used in the fabrication of optoelectronic components such as flat panel displays and solar cells due to its high transparency in the visible spectrum and high electrical conductivity.