Tin Oxide-Bismuth
Sputtering TargetChemical Name
Chemical Formula
Purity
99.99%
Composition
90/10 at% SnO:Bi
Size
2 inch dia x 5.3 mm th.
EINECS Number
Quantity Available
pcs
CAS Number
Status
Product ID
SPSNOBI2D5T4N
Hazmat
Catalog Number
10881
Description
Comments
inred Allow 3-4 weeks for production
Tin oxide doped with bismuth is utilized as a sputtering target material to create transparent conductive oxide (TCO) thin films with modified electrical and optical properties.
Bismuth-doped tin oxide films are employed in optoelectronic devices where high transparency and specific work functions are required for electrode layers.
Used as an n-type semiconductor material where bismuth doping levels are adjusted to tune the carrier concentration and bandgap for electronic components.
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