Tin Sulfide, Sputtering Target, 99.999%, 3 inch dia x 0.125 inch th.

Tin disulfide is utilized as an n-type semiconductor with a wide bandgap (approx. 2.2 eV) for use in photodetectors and solar cell absorber layers.

SnS2 is a layered transition metal dichalcogenide (TMDC) used in the fabrication of field-effect transistors and other thin-film electronic devices.

High-purity SnS2 targets are used in magnetron sputtering processes to deposit thin films for photovoltaic and sensing applications.

SnS2 is researched as a high-capacity anode material for lithium-ion batteries due to its ability to undergo conversion and alloying reactions.

SnS2 is synthesized into 2D nanosheets and quantum dots to exploit quantum confinement effects in catalytic and electronic applications.