Tin Sulfide, Sputtering Target, 99.999%, 8 inch dia x 4 mm th.

Tin sulfide is utilized as a p-type semiconductor absorber layer in thin-film solar cells and photodetectors due to its favorable bandgap and high absorption coefficient.

Used as a non-toxic, earth-abundant semiconductor material for the development of next-generation photovoltaic devices and thermoelectric components.

SnS targets are used in physical vapor deposition processes to create uniform thin films for electronic and optical applications.

Tin sulfide is employed as an evaporation source in thermal evaporation systems to deposit thin layers for semiconductor device fabrication.

Investigated as a high-capacity conversion-type anode material for lithium-ion batteries due to its theoretical capacity and layered structure.

Synthesized into various nanostructures such as nanosheets and quantum dots to exploit size-dependent optical and electronic properties.