Tin Selenide, Sputtering Target, 99.99%, 4 inch dia x 0.250 inch th.

Tin selenide is a narrow-bandgap IV-VI semiconductor utilized in the fabrication of high-efficiency thermoelectric devices and photovoltaic cells due to its exceptional phonon-scattering properties.

SnSe targets are used in magnetron sputtering processes to deposit thin films for phase-change memory applications and solar energy conversion layers.

Tin selenide is employed as an evaporation source in physical vapor deposition to create stoichiometric thin films for optoelectronic sensors.

Used in the development of infrared photodetectors and optical switching devices owing to its tunable electronic properties and high absorption coefficient.

Synthesized into 2D nanosheets and quantum dots to exploit quantum confinement effects for enhanced catalytic and electronic performance.