Tellurium Arsenic Germanium Silicon - Chalcogenide Glass, Sputtering Target, 99.99%, 440 mm dia x 9 mm th.

TeAsGeSi chalcogenide glass targets are used in sputtering processes to deposit thin films for phase-change memory (PCM) and ovonic threshold switching (OTS) devices.

This quaternary chalcogenide alloy is utilized as a semiconductor material in the fabrication of non-volatile memory cells and amorphous switching circuits.

Used in the development of infrared-transmitting optical components and photonic integrated circuits due to its unique refractive index and transparency in the IR spectrum.