Titanium Silicide, Sputtering Target, 99.95%, 6 inch dia x 0.25 inch th.

Titanium silicide is used as a sputtering target material to create thin-film silicide layers for ohmic contacts and gate electrodes in microelectronic devices.

Used in the fabrication of integrated circuits to form low-resistivity interconnects and stable metal-semiconductor interfaces.

Utilized for its high melting point and chemical stability in high-temperature environments and protective coatings.