Vanadium Silicide, Sputtering Target, 99.5%, 3 inch dia x 0.125 inch th.

Vanadium silicide is used as a sputtering target material to create thin films for microelectronic components and integrated circuits, providing stable ohmic contacts and interconnects.

Used in semiconductor manufacturing for the formation of silicide layers that act as low-resistance contact materials and gate electrodes in MOS devices.

Due to its high melting point and chemical stability, it is utilized in refractory applications requiring resistance to oxidation and high-temperature environments.