Tungsten Selenide (Niobium doped), Sputtering Target, 99.9%, 1 inch dia x 0.125 inch th.

Niobium-doped tungsten selenide acts as a p-type semiconductor material used in the fabrication of 2D electronic devices and field-effect transistors.

Used in the development of next-generation photodetectors and light-emitting diodes due to its tunable bandgap and transition metal dichalcogenide properties.

Utilized as a high-purity sputtering target material for the deposition of p-type doped thin films in thin-film transistor and sensor research.

Produced as monolayer or few-layer nanosheets via exfoliation for research into quantum properties and valleytronics.