Ytterbium Silicide, Sputtering Target, 99.5%, 1 inch dia x 0.250 inch th.

Ytterbium silicide is utilized as a sputtering target material for the deposition of thin films in microelectronic and optoelectronic device fabrication.

Used in the formation of ohmic contacts and Schottky barriers on silicon-based semiconductor devices due to its specific work function and thermal stability.

As a rare earth silicide, it is studied for its unique electronic properties and potential integration into advanced silicon-based technologies.