Zinc oxide-Er doped, Sputtering Target, 99.99%, 3 inch dia x 0.125 inch th.

Erbium-doped zinc oxide is utilized for its electroluminescence and photoluminescence properties, particularly for light-emitting diodes and laser diodes operating in the infrared spectrum.

Used as a target material in magnetron sputtering to create thin films for transparent conducting oxides and photonic devices.

Acts as a wide-bandgap semiconductor material where Er-doping modifies the electronic band structure for specific optoelectronic functionalities.

Synthesized as nanorods or nanoparticles to enhance the surface-to-volume ratio for improved light emission and sensing applications.