Zinc Oxide (P doped), Sputtering Target, 99.99%, 4 inch dia x 0.125 inch th.

Phosphorus-doped Zinc Oxide is utilized as a p-type semiconductor material for the fabrication of homojunction LEDs and transparent thin-film transistors.

Used as a high-purity sputtering target material to deposit p-type transparent conductive oxide (TCO) films in vacuum coating processes.

Applied in the development of ultraviolet photodetectors and light-emitting diodes due to its wide bandgap and tunable electrical properties via doping.