Catalog Number
20139
Description
Anhydrous
Comments
inred, Hygroscopic
Used as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to deposit tungsten and tungsten silicide thin films for gate electrodes and interconnects.
Utilized in the preparation of tungsten oxide films for electrochromic devices and specialized optical coatings via vapor phase deposition.
Acts as a starting material for the synthesis of tungsten-based nanoparticles and tungsten disulfide nanotubes through controlled reduction or sulfidization.
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