Gallium Nitride (GaN), CAS 25617-97-4

Home > Search > Gallium Nitride

GaN

Gallium Nitride (GaN)

Empirical Formula: GaN
HazMat: Not hazardous for transportation
CAS No.: 25617-97-4
EINECS No.: 247-129-0
Tags: Semiconductor Crystal Growth Nitride Pulsed Laser Deposition (PLD)Refractory Material Specialty Inorganics

	Product ID	Description	Compare	expand
	POGAN100004N5	Powder \| -100 mesh approx \| 99.995%

Can't find what you're looking for? Contact us!

chemical image

Powder

	Product ID	Description	Compare	expand
	POGAN100004N5	Powder \| -100 mesh approx \| 99.995%

	Product ID	Description	Compare	expand
	POGAN100004N5	Powder \| -100 mesh approx \| 99.995%

chemical image

Sputtering Target

	Product ID	Description	Compare	expand
	SPGAN1D6T005N	Sputtering Target \| 1 inch dia x 0.25 inch th. \| 99.999%
	SPGAN3D3T005N	Sputtering Target \| 3 inch dia x 0.125 inch th. \| 99.999%
	SPGAN2D3T005N	Sputtering Target \| 2 inch dia x 0.125 inch th. \| 99.999%
	SPGAN3D6T005N	Sputtering Target \| 3 inch dia x 0.25 inch th. \| 99.999%
	SPGAN2D6T005N	Sputtering Target \| 2 inch dia x 0.25 inch th. \| 99.999%

	Product ID	Description	Compare	expand
	SPGAN1D6T005N	Sputtering Target \| 1 inch dia x 0.25 inch th. \| 99.999%
	SPGAN3D3T005N	Sputtering Target \| 3 inch dia x 0.125 inch th. \| 99.999%
	SPGAN2D3T005N	Sputtering Target \| 2 inch dia x 0.125 inch th. \| 99.999%
	SPGAN3D6T005N	Sputtering Target \| 3 inch dia x 0.25 inch th. \| 99.999%
	SPGAN2D6T005N	Sputtering Target \| 2 inch dia x 0.25 inch th. \| 99.999%

chemical image

Granules

	Product ID	Description	Compare	expand
	GRGAN3600004N	Granules \| 3 mm -6 mm \| Crystalline aggregate \| 99.99%

	Product ID	Description	Compare	expand
	GRGAN3600004N	Granules \| 3 mm -6 mm \| Crystalline aggregate \| 99.99%