Gallium Nitride, Sputtering Target, 99.999%, 3 inch dia x 0.125 inch th.

Gallium Nitride is a wide-bandgap semiconductor used in high-frequency, high-power, and high-temperature electronic devices such as RF components and power converters.

Used extensively in the production of blue and white light-emitting diodes (LEDs) and blue laser diodes due to its direct bandgap properties.

GaN sputtering targets are utilized to deposit thin films for the fabrication of advanced electronic and optoelectronic thin-film layers.

Synthesized into nanowires and quantum dots for next-generation nanoscale electronic and photonic applications.