Tungsten Silicide, Disk, 99%, 10 mm dia. x 5 mm th.

Used as a contact material and in polycide gates within integrated circuits due to its high conductivity and thermal stability.

Fabricated into sputtering targets for the deposition of thin-film silicide layers in microelectronic device manufacturing.

Utilized for its high melting point and oxidation resistance in high-temperature coating applications.