Bismuth (III) Telluride
Sputtering TargetBismuth (III) Telluride, Sputtering Target, 99.999%, 2 inch dia x 0.25 inch th.
Product Specifications
Chemical Name
Chemical Formula
Purity
99.999%
Composition
Size
2 inch dia x 0.25 inch th.
EINECS Number
215-135-2
Quantity Available
pcs
CAS Number
1304-82-1
Status
Product ID
SPBI2TE32D6T5N
Hazmat
Class 6.1, UN3284, PG III
Catalog Number
3869
Description
Comments
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Element Name
Bismuth (III) Telluride
Symbol
Bi2Te3
Atomic Number
-
Atomic Weight
800.76 g/mol
Melting Point
585 °C
Boiling Point
-
Density
7.7 g/cm³
Crystal Structure
Rhombohedral
Color / Appearance
Gray crystalline solid
Thermal Conductivity
1.20 W/(m·K)
Electrical Resistivity
1.3 x 10^-5 Ω·m
Coefficient of Thermal Expansion
12.9 µm/m·K
Electronegativity
-
Neutron Cross Section
-
Electron Configuration
-
This Product
SPBI2TE32D6T5N
Form
Sputtering Target
Purity
99.999%
Composition
-
Size
2 inch dia x 0.25 inch th.
Quantity Available
pcs
Catalog Number
3869
info
Semiconductors
Bismuth telluride is a narrow-gap layered semiconductor used extensively in thermoelectric devices for solid-state cooling and power generation.
info
Sputtering
Bismuth telluride targets are used in sputtering processes to deposit thin films for the fabrication of micro-thermoelectric generators and sensors.
info
Evaporation materials
Used as a source material in physical vapor deposition to create high-performance thermoelectric thin films on various substrates.
warning
HazMat Classification
Class 6.1, UN3284, PG III
description
Documentation
Safety Data Sheet (SDS) and Certificate of Analysis (COA) available for download. GHS-compliant labeling provided with all shipments.
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Shipping
Shipped via FedEx Ground or UPS. Hazmat surcharges apply. International orders may require export compliance review. Custom packaging available.
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Quality Assurance
All products supplied with lot-specific COA including ICP-OES elemental analysis, XRD phase identification, and particle size distribution data.
description
Certificates of Analysis (COA)
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