Germanium Antimony Telluride
Sputtering TargetChemical Name
Chemical Formula
Purity
99.99%
Composition
2/2/5 at%
Size
3 inch dia x 0.125 inch th.
EINECS Number
Quantity Available
pcs
CAS Number
243854-63-9
Status
Product ID
SPGESBTE3D3T4N
Hazmat
Class 6.1, UN3284, PG II
Catalog Number
13380
Description
Comments
Germanium Antimony Telluride is used as a sputtering target material to deposit thin films for phase-change memory (PRAM) and optical data storage applications.
GST is a critical chalcogenide glass used in semiconductor manufacturing for non-volatile phase-change random-access memory due to its rapid switching between amorphous and crystalline states.
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