Tantalum Silicide, Sputtering Target, 99.99%, 3 inch dia x 0.125 inch th.

Used as a conductive material for gates and interconnects in integrated circuits due to its high temperature stability and low resistivity.

Fabricated into sputtering targets for the deposition of thin films used in microelectronics and protective coatings.

Utilized in high-temperature environments due to its excellent oxidation resistance and high melting point.