Lanthanum Aluminum Oxide, Wafer, 99.9%, 10 mm x 10 mm x 0.5 mm th.

Used as a high-k dielectric material and as a substrate for the epitaxial growth of complex oxide thin films and high-temperature superconductors.

Fabricated into sputtering targets for the deposition of thin films used in microelectronics and optical coatings.

Applied as a thin film coating due to its high refractive index and transparency in the visible and near-infrared spectrum.

Utilized as a specialized mixed rare-earth oxide ceramic for high-performance electronic and microwave applications.