Germanium Selenide (GeSe), CAS 12065-10-0, Semiconductor

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GeSe

Germanium Selenide (GeSe)

Synonym(s): Semiconductor
Empirical Formula: GeSe
HazMat: Class 6.1, UN3283, PG III
CAS No.: 12065-10-0
EINECS No.: 235-061-4
Tags: Battery Materials Semiconductor Selenide

	Product ID	Description	Compare	expand
	GPGESE600004N	Pieces \| < 6 mm \| 99.99%

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Pieces

	Product ID	Description	Compare	expand
	GPGESE600004N	Pieces \| < 6 mm \| 99.99%
	GPGESE600005N	Pieces \| < 6 mm \| 99.999%

	Product ID	Description	Compare	expand
	GPGESE600004N	Pieces \| < 6 mm \| 99.99%
	GPGESE600005N	Pieces \| < 6 mm \| 99.999%

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Powder

	Product ID	Description	Compare	expand
	POGESE160005N	Powder \| -160 mesh approx \| 99.999%

	Product ID	Description	Compare	expand
	POGESE160005N	Powder \| -160 mesh approx \| 99.999%

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Sputtering Target

	Product ID	Description	Compare	expand
	SPGESE2D3T05N	Sputtering Target \| 2 inch dia x 0.125 inch th. \| 40:60 at% \| 99.999%
	SPGESE3D3T05N	Sputtering Target \| 3 inch dia x 0.125 inch th. \| 40:60 at% \| 99.999%
	SPGESE164D6T4N	Sputtering Target \| 164 mm dia x 6.25 mm th. \| 40/60 at% \| 99.99%
	SPGESE10D6T4N-2	Sputtering Target \| 10 mm dia x 6.50 mm th. \| 40/60 at% \| 99.99%

	Product ID	Description	Compare	expand
	SPGESE2D3T05N	Sputtering Target \| 2 inch dia x 0.125 inch th. \| 40:60 at% \| 99.999%
	SPGESE3D3T05N	Sputtering Target \| 3 inch dia x 0.125 inch th. \| 40:60 at% \| 99.999%
	SPGESE164D6T4N	Sputtering Target \| 164 mm dia x 6.25 mm th. \| 40/60 at% \| 99.99%
	SPGESE10D6T4N-2	Sputtering Target \| 10 mm dia x 6.50 mm th. \| 40/60 at% \| 99.99%