Chemical Name
Germanium Selenide
Chemical Formula
GeSe
Purity
99.999%
Composition
Size
< 6 mm
EINECS Number
235-061-4
Quantity Available
kg
CAS Number
12065-10-0
Status
Product ID
GPGESE600005N
Hazmat
Class 6.1, UN3283, PG III
Catalog Number
4789
Description
Comments
mixed phases of GeSe and GeSe2
Germanium Selenide is a IV-VI chalcogenide semiconductor used in the development of phase-change memory devices and 2D layered materials for electronic switching.
GeSe targets are utilized in sputtering processes to deposit thin films for infrared optics and memory storage applications.
Used in the fabrication of photodetectors and solar cells due to its narrow bandgap and high absorption coefficient in the visible and near-infrared spectrum.
GeSe is employed as an evaporation source for creating thin-film layers in vacuum deposition systems for optical coatings.
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