Germanium Selenide, Sputtering Target, 99.99%, 164 mm dia x 6.25 mm th.

Germanium Selenide is a IV-VI chalcogenide semiconductor used in the development of phase-change memory devices and 2D layered materials for electronic switching.

GeSe targets are utilized in sputtering processes to deposit thin films for infrared optics and memory storage applications.

Used in the fabrication of photodetectors and solar cells due to its narrow bandgap and high absorption coefficient in the visible and near-infrared spectrum.

GeSe is employed as an evaporation source for creating thin-film layers in vacuum deposition systems for optical coatings.