Silicon Carbide (SiC), CAS 409-21-2

Home > Search > Silicon Carbide

Silicon Carbide (SiC)

Empirical Formula: SiC
HazMat: Not hazardous for transportation
CAS No.: 409-21-2
EINECS No.: 206-991-8
Tags: Infrared Optical Materials Semiconductor Crystal Growth Carbide Pulsed Laser Deposition (PLD)Ceramics Refractory Material Specialty Inorganics Alloys 3D Printing Aerospace Nano-Materials Refractory Metals and Compounds Evaporation Deposition Materials Optical Coating Materials

	Product ID	Description	Compare	expand
	GRSIC030002N5	Granules \| 0.1 mm -3 mm \| 99.5%

Can't find what you're looking for? Contact us!

Additional Documents

chemical image

Granules

	Product ID	Description	Compare	expand
	GRSIC030002N5	Granules \| 0.1 mm -3 mm \| 99.5%
	GRSIC010002N5	Granules \| 0.2 mm -1 mm \| 99.5%
	GRSIC230002N5	Granules \| 2 mm -3 mm \| 99.5%

	Product ID	Description	Compare	expand
	GRSIC030002N5	Granules \| 0.1 mm -3 mm \| 99.5%
	GRSIC010002N5	Granules \| 0.2 mm -1 mm \| 99.5%
	GRSIC230002N5	Granules \| 2 mm -3 mm \| 99.5%

chemical image

Powder

	Product ID	Description	Compare	expand
	POSIC400002N5	Powder \| 1250 mesh (2 mic aps) approx \| α-phase \| 99.5%
	POSIC2000002N	Powder \| -200 mesh (49 mic aps) \| β-phase \| 99%
	POSIC325002N5	Powder \| -325 mesh (40 mic aps) approx \| α-phase \| 99.5%
	POSIC625002N8-1	Powder \| -625 mesh (19 mic aps) approx \| α-phase \| 99.8%
	POSIC4800003N	Powder \| < 2000 nm \| α-phase \| 99.9%

	Product ID	Description	Compare	expand
	POSIC400002N5	Powder \| 1250 mesh (2 mic aps) approx \| α-phase \| 99.5%
	POSIC2000002N	Powder \| -200 mesh (49 mic aps) \| β-phase \| 99%
	POSIC325002N5	Powder \| -325 mesh (40 mic aps) approx \| α-phase \| 99.5%
	POSIC625002N8-1	Powder \| -625 mesh (19 mic aps) approx \| α-phase \| 99.8%
	POSIC4800003N	Powder \| < 2000 nm \| α-phase \| 99.9%

chemical image

Sputtering Target

	Product ID	Description	Compare	expand
	SPSIC2D3T02N5	Sputtering Target \| 2 inch dia x 0.125 inch th. \| 99.5%
	SPSIC2D6T02N5	Sputtering Target \| 2 inch dia x 0.25 inch th. \| 99.5%
	SPSIC3D3T02N5	Sputtering Target \| 3 inch dia x 0.125 inch th. \| 99.5%
	SPSIC3D6T02N5	Sputtering Target \| 3 inch dia x 0.25 inch th. \| 99.5%
	SPSIC4D3T02N5-1	Sputtering Target \| 4 inch dia x 0.125 inch th. \| 99.5%

	Product ID	Description	Compare	expand
	SPSIC2D3T02N5	Sputtering Target \| 2 inch dia x 0.125 inch th. \| 99.5%
	SPSIC2D6T02N5	Sputtering Target \| 2 inch dia x 0.25 inch th. \| 99.5%
	SPSIC3D3T02N5	Sputtering Target \| 3 inch dia x 0.125 inch th. \| 99.5%
	SPSIC3D6T02N5	Sputtering Target \| 3 inch dia x 0.25 inch th. \| 99.5%
	SPSIC4D3T02N5-1	Sputtering Target \| 4 inch dia x 0.125 inch th. \| 99.5%

chemical image

Foil

	Product ID	Description	Compare	expand
	FOSIC10010012N5	Foil \| 100 mm x 100 mm x 1 mm \| Windows/Blanks \| 99.5%
	FOSIC505012N5	Foil \| 50 mm x 50 mm x 1 mm \| Windows/Blanks \| 99.5%
	FOSIC101002N5	Foil \| 10 mm x 10 mm x 0.35 mm \| Windows/Blanks \| 99.5%
	FOSIC252502N5	Foil \| 25.4 mm x 25.4 mm x 0.35 mm \| Windows/Blanks \| 99.5%

	Product ID	Description	Compare	expand
	FOSIC10010012N5	Foil \| 100 mm x 100 mm x 1 mm \| Windows/Blanks \| 99.5%
	FOSIC505012N5	Foil \| 50 mm x 50 mm x 1 mm \| Windows/Blanks \| 99.5%
	FOSIC101002N5	Foil \| 10 mm x 10 mm x 0.35 mm \| Windows/Blanks \| 99.5%
	FOSIC252502N5	Foil \| 25.4 mm x 25.4 mm x 0.35 mm \| Windows/Blanks \| 99.5%

chemical image

Wafer

	Product ID	Description	Compare	expand
	WASIC110002N5	Wafer \| 1 inch x 1 inch x 0.35 mm th. \| 4H-SiC, N-Type \| 99.5%

	Product ID	Description	Compare	expand
	WASIC110002N5	Wafer \| 1 inch x 1 inch x 0.35 mm th. \| 4H-SiC, N-Type \| 99.5%