Chemical Name
Silicon Carbide
Chemical Formula
SiC
Purity
99.5%
Composition
Size
1 inch x 1 inch x 0.35 mm th.
EINECS Number
206-991-8
Quantity Available
pcs
CAS Number
409-21-2
Status
Product ID
WASIC110002N5
Hazmat
Not hazardous for transportation
Catalog Number
8079
Description
4H-SiC, N-Type
Comments
Silicon carbide is a wide-bandgap semiconductor used in power electronics for high-voltage, high-temperature, and high-frequency applications due to its superior thermal conductivity and breakdown electric field strength.
Silicon carbide targets are used in physical vapor deposition to create hard, wear-resistant, and thermally stable thin films on mechanical components and optical devices.
Due to its high melting point and chemical inertness, SiC is used in the manufacture of kiln furniture, crucible linings, and high-temperature furnace components.
SiC maintains its mechanical strength at temperatures exceeding 1400°C, making it essential for structural components in high-heat environments.
Used as a substrate for GaN-based LEDs and in specialized ultraviolet (UV) photodetectors due to its wide bandgap properties.
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