Aluminum Nitride, Sputtering Target, 99.5%, 381 mm dia x 12.7 mm th.

Aluminum Nitride is used as a high-thermal-conductivity substrate and heat spreader for high-power semiconductor devices and integrated circuits.

Used in the fabrication of deep ultraviolet LEDs and laser diodes due to its wide bandgap and compatibility with Gallium Nitride.

AlN targets are used in reactive sputtering processes to deposit thin films for piezoelectric sensors and surface acoustic wave (SAW) devices.

Utilized in thermal spray coatings to provide surfaces with high electrical insulation and excellent thermal shock resistance.