Hafnium Zirconium Oxide, Sputtering Target, 99.9%, 3 inch dia x 0.125 inch th.

Hafnium Zirconium Oxide (HZO) is utilized as a high-k dielectric material and for its ferroelectric properties in advanced CMOS logic and non-volatile memory devices.

HZO targets are used in magnetron sputtering processes to deposit thin films for microelectronic components requiring precise ferroelectric layers.

Used to create high-refractive index layers in multilayer optical coatings for laser applications and specialized mirrors.