Silicon Carbide, Sputtering Target, 99.9%, 342.8 mm dia x 6 mm th.

Silicon carbide is a wide-bandgap semiconductor used in power electronics for high-voltage, high-temperature, and high-frequency applications due to its superior thermal conductivity and breakdown electric field strength.

Silicon carbide targets are used in physical vapor deposition to create hard, wear-resistant, and thermally stable thin films on mechanical components and optical devices.

Due to its high melting point and chemical inertness, SiC is used in the manufacture of kiln furniture, crucible linings, and high-temperature furnace components.

SiC maintains its mechanical strength at temperatures exceeding 1400°C, making it essential for structural components in high-heat environments.

Used as a substrate for GaN-based LEDs and in specialized ultraviolet (UV) photodetectors due to its wide bandgap properties.