Hafnium Oxide, Rod, 99.995%, 10 mm dia x 10 cm length

Hafnium oxide sputtering targets are used to deposit high-k dielectric thin films for advanced gate insulators in microelectronic devices.

Used as a high-refractive index material in multilayer optical coatings for UV and IR applications due to its wide bandgap and high damage threshold.

Utilized as a source material for physical vapor deposition to create protective and functional coatings on optical components.

Serves as a critical high-k gate dielectric material to replace silicon dioxide, allowing for further miniaturization of transistors.

Due to its extremely high melting point and chemical stability, it is used in specialized refractory applications and high-temperature ceramics.